Cite
Near‐band‐edge absorption and positron trapping under illumination in semi‐insulating GaAs: Role of As vacancies
MLA
Pekka J. Hautojärvi, et al. “Near‐band‐edge Absorption and Positron Trapping under Illumination in Semi‐insulating GaAs: Role of As Vacancies.” Applied Physics Letters, vol. 66, May 1995, pp. 2534–36. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........6493aca876e597c8a9870218a4714e14&authtype=sso&custid=ns315887.
APA
Pekka J. Hautojärvi, Sebahattin Tüzemen, C. Le Berre, Roberto Fornari, M.R. Brozel, R. Mih, C. Corbel, Kimmo Saarinen, & S. Kuisma. (1995). Near‐band‐edge absorption and positron trapping under illumination in semi‐insulating GaAs: Role of As vacancies. Applied Physics Letters, 66, 2534–2536.
Chicago
Pekka J. Hautojärvi, Sebahattin Tüzemen, C. Le Berre, Roberto Fornari, M.R. Brozel, R. Mih, C. Corbel, Kimmo Saarinen, and S. Kuisma. 1995. “Near‐band‐edge Absorption and Positron Trapping under Illumination in Semi‐insulating GaAs: Role of As Vacancies.” Applied Physics Letters 66 (May): 2534–36. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........6493aca876e597c8a9870218a4714e14&authtype=sso&custid=ns315887.