The Charge Carrier Recombination Processes in Dislocated Silicon

The effect of dislocations introduced by plastic deformation (ND = 1 × 102 to 1 × 107 cm−2) on the nonequilibrium carrier recombination processes for different levels of their injection is studied. The charge-carrier lifetime (τ) is measured by means of conductivity modulation at a point contact (T = 300 K) in n-Si (ϱ = 150 Ω cm). With increasing ND, τ is shown either to increase (low-level injection) or to decrease (high-level injection), where this dependence is stronger in crystals with low content of technological impurities. An anomalously drastic decrease of τ with increasing injection level is observed in Si with higher dislocation density. The results obtained are explained taking into account the presence of the potential barrier near dislocations, the magnitude of which, as well as the volume of the dislocation space-charge region depend on NDand decrease with increasing injection level. [Russian Text Ignored.]