Suppression of 1∕f Noise in Accumulation Mode FD-SOI MOSFETs on Si(100) and (110) Surfaces

In this paper, a new approach to reduce the 1/f noise levels in the MOSFETs on varied silicon orientations, such as Si(100) and (110) surfaces, has been carried out. We focus on the Accumulation‐mode (AM) FD‐SOI device structure and demonstrate that the 1/f noise levels in this AM FD‐SOI MOSFETs are obviously reduced on both the Si(100) and (110) surfaces.