Indium phosphide crystal growth from phosphorus-rich melt

P-rich of InP crystals are rather difficult to achieve, due to the high phosphorus pressure at the melting point. By using the P-injection in-situ synthesis method, there is excessive phosphorus in the melt. In the conditions of M/sub In/ [In]/sub mol/, the melt might be P-rich. Since a high thermal stress exists in the LEC growth process with large temperature gradient, it is difficult to release stress, a large number of dislocations come into being around the pores. The pores are distributed in the ingots irregularly. The diameter of the pores is from