The influence of device structure on resistance switching in PbS QDs film inserted RRAM

The introduction of PbS QD (quantum dot) films has been proved, dramatically, to optimize the resistive switching (RS) performance in oxide resistive random access memory. In order to optimize parameters to a greater extent, the necessity of in-depth understanding of the resistance switching mechanism is self-evident. In this paper, PbS QD layers were inserted into a Ta/AlOxNy/Pt structure device in different positions in order to investigate the influence of the device structure in the PbS QD film inserted device. The Ta/PbS QDs/AlOxNy/Pt device with a Ta anion reservoir and a PbS QD film anion reservoir in the same direction exhibits excellent optimization of parameters, which is ideal for low-power devices. A model is constructed to elaborate the resistive switching process. Moreover, modulation of PbS QD film thickness on RS has been studied. A device with middle thickness of the PbS QD films combines low voltage, low current, and excellent stability, which is believed to be a favorable structure for the PbS QD inserted device.