Back to Search
Start Over
Chemical State Analysis of Si-Doped CNT on SiC by Hard X-Ray Photoelectron Spectroscopy
- Source :
- e-Journal of Surface Science and Nanotechnology. 9:54-57
- Publication Year :
- 2011
- Publisher :
- Surface Science Society Japan, 2011.
-
Abstract
- The carbon nanotubes (CNTs) on 6H-SiC and Si-doped CNTs on 6H-SiC were analyzed by hard x-ray photoelectron spectroscopy to identify the chemical bonding character of the doped Si in the CNT layer. We performed the depth profiling of the sample by changing photoelectron's take-off-angle (TOA). The spectral component associated with the doped Si is clearly seen in the Si 1s photoelectron spectra of Si-doped CNTs on 6H-SiC. The Si 1s peak shifts toward lower kinetic energy side from TOA = 80° (bulk-sensitive) to 8° (surface-sensitive), which implies the formation of the sp2-like structure in Si-doped CNTs. [DOI: 10.1380/ejssnt.2011.54]
- Subjects :
- Materials science
Silicon
Doping
Analytical chemistry
chemistry.chemical_element
Bioengineering
Surfaces and Interfaces
Carbon nanotube
Condensed Matter Physics
Spectral line
Surfaces, Coatings and Films
law.invention
chemistry.chemical_compound
Chemical state
chemistry
Chemical bond
X-ray photoelectron spectroscopy
Mechanics of Materials
law
Silicon carbide
Biotechnology
Subjects
Details
- ISSN :
- 13480391
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- e-Journal of Surface Science and Nanotechnology
- Accession number :
- edsair.doi...........63a1fbb3c0448cab5f6171443fbb722f