Resonance structure and stability of intense terahertz‐driven semiconductor Wannier‐Stark ladder

We present a theoretical study of an electronic state in the semiconductor Wannier-Stark ladder (WSL) driven by an intense THz laser. Numerical calculations based on the R-matrix Floquet theory have revealed that the dynamic localization (DL) is unstable against the Fano resonance-like interminiband decay mechanism caused by the THz-mediated coupling, termed here the dynamic Fano resonance (DFR). The obtained result is sharply contrasted with the conventional understanding without the introduction of DFR that the degree of stability of the DL would be comparable to or more than that of the WSL with no THz laser (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)