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X-Ray Irradiation and Bias Effects in Fully-Depleted and Partially-Depleted SiGe HBTs Fabricated on CMOS-Compatible SOI
- Source :
- IEEE Transactions on Nuclear Science. 53:3182-3186
- Publication Year :
- 2006
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2006.
-
Abstract
- X-ray total ionizing dose effects in both fully-depleted and partially-depleted SiGe HBT-on-SOI transistors are investigated at room and at cryogenic temperatures for the first time. Devices irradiated in grounded and forward-active mode configurations exhibit a different behavior depending on the collector doping of the device. The degradation produced by 10 keV x-rays is compared to previously reported 63 MeV proton results on the same fully-depleted SiGe HBT-on-SOI devices, showing decreased degradation for proton irradiation. Both collector and substrate bias are shown to affect the two-dimensional nature of the current flow in these devices, resulting in significant differences in the avalanche multiplication characteristics (hence, breakdown voltage) across temperature
- Subjects :
- Nuclear and High Energy Physics
Materials science
Proton
Physics::Instrumentation and Detectors
business.industry
Doping
Transistor
Silicon on insulator
Substrate (electronics)
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
law.invention
Nuclear Energy and Engineering
law
Absorbed dose
Breakdown voltage
Optoelectronics
Irradiation
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 00189499
- Volume :
- 53
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Nuclear Science
- Accession number :
- edsair.doi...........633f3c41e4d15fd8b672ba5ab5485c27