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Inductively coupled plasma etching of bulk tungsten for MEMS applications

Authors :
Yiming Zhang
Shibin Zhang
Lu Song
Shuhui Chen
Jing Chen
Jin Luo
Jia Hu
Nannan Li
Source :
2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS).
Publication Year :
2014
Publisher :
IEEE, 2014.

Abstract

Tungsten based MEMS devices have the potential to be used for many applications, such as tools for micro electrical discharge machining and ultrasonic machining, or mold for inject molding. For the first time, bulk tungsten inductively coupled plasma (ICP) etching was developed and characterized, which is capable of producing high aspect ratio (>13) structures with feature size below 3μm. Etching depth of 230μm has been achieved at an etch rate up to 2.2μm/min. This technology offers big opportunities for MEMS applications.

Details

Database :
OpenAIRE
Journal :
2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)
Accession number :
edsair.doi...........63128cad0bef525fbe25e89cd7ae5789
Full Text :
https://doi.org/10.1109/memsys.2014.6765687