Back to Search
Start Over
New X-ray insight into oxygen intercalation in epitaxial graphene grown on 4H-SiC(0001)
- Source :
- Journal of Applied Physics. 117:105301
- Publication Year :
- 2015
- Publisher :
- AIP Publishing, 2015.
-
Abstract
- Efficient control of intercalation of epitaxial graphene by specific elements is a way to change properties of the graphene. Results of several experimental techniques, such as X-ray photoelectron spectroscopy, micro-Raman mapping, reflectivity, attenuated total reflection, X-ray diffraction, and X-ray reflectometry, gave a new insight into the intercalation of oxygen in the epitaxial graphene grown on 4H-SiC(0001). These results confirmed that oxygen intercalation decouples the graphene buffer layer from the 4H-SiC surface and converts it into the graphene layer. However, in contrast to the hydrogen intercalation, oxygen does not intercalate between carbon planes (in the case of few layer graphene) and the interlayer spacing stays constant at the level of 3.35–3.32 A. Moreover, X-ray reflectometry showed the presence of an oxide layer having the thickness of about 0.8 A underneath the graphene layers. Apart from the formation of the nonuniform thin oxide layer, generation of defects in graphene caused by...
- Subjects :
- Materials science
business.industry
Graphene
Intercalation (chemistry)
Oxide
General Physics and Astronomy
law.invention
chemistry.chemical_compound
Crystallography
X-ray photoelectron spectroscopy
chemistry
law
Optoelectronics
business
Bilayer graphene
Layer (electronics)
Graphene nanoribbons
Graphene oxide paper
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 117
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........62c78044be970d78b7bf0c29c281ffbf