Transparent conducting indium molybdenum oxide films by pulsed laser ablation

Highly transparent and conducting molybdenum oxide (2, 3, 4 wt%) doped indium oxide thin films are prepared using pulsed laser ablation. XRD and AFM analysis show that at higher MoO 3 doping concentration (>3 wt%) inhibits grain growth due to the presence of Mo atoms at grain boundaries. The average size of the crystallites increases with MoO 3 doping up to 3% and thereafter decreases. The doped films exhibited high values of optical transmittance and low values of electrical resistivity compared to undoped films. Beyond 3 wt% MoO 3 doping, the optical and electrical properties slightly decline. The observed band gap widening in the films can be attributed to Moss–Burstein effect. All the films show intense PL emission in the UV–visible region.