Shallow junctions in p-In.53Ga.47As by ion implantation

In this paper, we present results of current–voltage and admittance spectroscopy measurements on n + p junctions made by Si implantation into Zn doped In .53 Ga .47 As. The I–V characteristics show that the main conduction mechanisms at forward bias is recombination in the space-charge zone, whereas a thermally-activated tunneling dominates the reverse characteristics at low bias and trap-assisted tunneling at medium and high bias. The use of Kramers–Kronig transforms on the admittance spectroscopy data allow us to detect a deep level at 0.36 eV, probably ascribed to thermally activated Zn acceptor dopants in p-In .53 Ga .47 As.