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Optical properties of indium nitride powder and films
- Source :
- Journal of Applied Spectroscopy. 73:95-98
- Publication Year :
- 2006
- Publisher :
- Springer Science and Business Media LLC, 2006.
-
Abstract
- Using photoluminescence and transmission measurements, we have studied the optical properties of indium nitride powder and thin films grown by molecular beam epitaxy. The bandgap for InN powder with electron concentration ∼ 4·1019 cm−3 was 0.94 eV, and for InN films with electron concentrations ∼1018 cm−3 it was 0.7 eV. We have established that when the electron concentration is increased to 8·1019 cm−3, the bandgap of InN increases to 1.0 eV. The change in the bandgap as a function of the concentration is due to the appearance of the Burstein-Moss effect.
Details
- ISSN :
- 15738647 and 00219037
- Volume :
- 73
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Spectroscopy
- Accession number :
- edsair.doi...........61d3de1a5e1ce61e4b37c0902501ec30