Cite
Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors
MLA
Xuebing Zhou, et al. “Thermal Stability Issue of Ultrathin Ti-Based Silicide for Its Application in Prospective DRAM Peripheral 3D FinFET Transistors.” Journal of Materials Science: Materials in Electronics, vol. 32, Aug. 2021, pp. 24107–14. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........61a895d6ddfad8a742231e0665bb3e13&authtype=sso&custid=ns315887.
APA
Xuebing Zhou, Chao Zhao, Tianchun Ye, Jing Xu, Dapeng Chen, Jianfeng Gao, Dan Zhang, Yongliang Li, Junfeng Li, Yaodong Liu, Jun Luo, Xianglie Sun, Jinbiao Liu, & Wenwu Wang. (2021). Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors. Journal of Materials Science: Materials in Electronics, 32, 24107–24114.
Chicago
Xuebing Zhou, Chao Zhao, Tianchun Ye, Jing Xu, Dapeng Chen, Jianfeng Gao, Dan Zhang, et al. 2021. “Thermal Stability Issue of Ultrathin Ti-Based Silicide for Its Application in Prospective DRAM Peripheral 3D FinFET Transistors.” Journal of Materials Science: Materials in Electronics 32 (August): 24107–14. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........61a895d6ddfad8a742231e0665bb3e13&authtype=sso&custid=ns315887.