Infrared activity of crystalline silicon and amorphous silicon

The thermo-resistance effect in silicon has been exploited for the fabrication of uncooled infrared detectors. In this paper, based on the Schrodinger equation of material radiation system and the micro-structure of silicon, the infrared absorption theory of silicon is analyzed. The results show that the infrared activity of amorphous silicon is more activate than crystalline silicon because of the fault and long range disorder, and using the impurity B, Li, and H, the infrared activity of silicon also will be activated.