Resistive switching characteristic and uniformity of low-power HfO x -based resistive random access memory with the BN insertion layer

In this letter, the Ta/HfO x /BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each. The reset current is reduced for the HfO x /BN bilayer device compared with that for the Ta/HfO x /TiN structure. Furthermore, the reset current decreases with increasing BN thickness. The HfO x layer is a dominating switching layer, while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN electrode. The current conduction mechanism of low resistance state in the HfO x /BN bilayer device is space-charge-limited current (SCLC), while it is Ohmic conduction in the HfO x device.