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Characterization of ZnSe single crystal grown by VBT using two zone tubular furnace: An excellent material for optoelectronic devices
- Source :
- Optik. 124:985-989
- Publication Year :
- 2013
- Publisher :
- Elsevier BV, 2013.
-
Abstract
- ZnSe single crystal of size ∼25 mm lengths and ∼10 mm diameter was grown by vertical Bridgman technique using two zone tubular furnace from the synthesized polycrystal of the compound. The powder X-ray diffraction analysis confirmed the crystal system of the grown crystal. The optical band gap of the grown crystal was calculated and found to be ∼2.704 eV by UV–vis–NIR analysis. The crystalline perfection was assessed by using high-resolution X-ray diffractometer (HRXRD) and chemical etching studies which reveals that the grown crystal has good crystalline perfection. The etch pit dislocation density was calculated and found to be 2 × 10 6 cm −2 . Good crystalline perfection and less dislocation density of the grown crystals makes, it important for optoelectronic device fabrications. The dielectric studies were also done over a wide range of frequency 100 Hz to 10 MHz at room temperature.
Details
- ISSN :
- 00304026
- Volume :
- 124
- Database :
- OpenAIRE
- Journal :
- Optik
- Accession number :
- edsair.doi...........6188066f1598aa3281fe0d035a1995b1