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Is quantum capacitance in graphene a potential hurdle for device scaling?
- Source :
- Nano Research. 7:453-461
- Publication Year :
- 2014
- Publisher :
- Springer Science and Business Media LLC, 2014.
-
Abstract
- Transistor size is constantly being reduced to improve performance as well as power consumption. For the channel length to be reduced, the corresponding gate dielectric thickness should also be reduced. Unfortunately, graphene devices are more complicated due to an extra capacitance called quantum capacitance (C Q) which limits the effective gate dielectric reduction. In this work, we analyzed the effect of C Q on device-scaling issues by extracting it from scaling of the channel length of devices. In contrast to previous reports for metal-insulator-metal structures, a practical device structure was used in conjunction with direct radio-frequency field-effect transistor measurements to describe the graphene channels. In order to precisely extract device parameters, we reassessed the equivalent circuit, and concluded that the on-state model should in fact be used. By careful consideration of the underlap region, our device modeling was shown to be in good agreement with the experimental data. C Q contributions to equivalent oxide thickness were analyzed in detail for varying impurity concentrations in graphene. Finally, we were able to demonstrate that despite contributions from C Q, grapheme’s high mobility and low-voltage operation allows for graphene channels suitable for next generation transistors.
- Subjects :
- Materials science
business.industry
Graphene
Gate dielectric
Transistor
Equivalent oxide thickness
Hardware_PERFORMANCEANDRELIABILITY
Condensed Matter Physics
Capacitance
Atomic and Molecular Physics, and Optics
law.invention
Quantum capacitance
law
Quantum mechanics
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
Equivalent circuit
General Materials Science
Electrical and Electronic Engineering
business
Scaling
Subjects
Details
- ISSN :
- 19980000 and 19980124
- Volume :
- 7
- Database :
- OpenAIRE
- Journal :
- Nano Research
- Accession number :
- edsair.doi...........617c0d3813aae78bb9a8f30d13c96bf7