P-29: A Polymer/Fullerene-based Material in Near-Infrared Photodetector Application

A novel semiconducting polymer, PDPP3T, with alternating diketopyrrolopyrrole and terthiophene units is presented in this study. Due to PDPP3T has a small band gap of 1.3 eV, and high hole mobility of 0.04 cm(2) V(-1) s(-1), it can be used for organic photo sensor to absorb the near infrared (NIR) parts of the spectrum. The photo sensor are fabricated from Poly (diketopyrrolopyrrole-terthiophene) (PDPP3T) and [6,6]-phenyl C61-butylric acid methyl ester (PCBM) using a solution-based, temperature assisted deposition protocol. Devices made by this protocol lead to photo and dark current of around 4.6µA/cm2 and 2.1nA/cm2 at -1V. The device yields a good linear response of photocurrent to the near infrared exposure (from 50-400µW/cm2) for a range of operating biases