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Atomic composition and stability of Langmuir–Blodgett monolayers based on siloxane dimer of quaterthiophene on the surface of polycrystalline gold
- Source :
- Physics of the Solid State. 59:2491-2496
- Publication Year :
- 2017
- Publisher :
- Pleiades Publishing Ltd, 2017.
-
Abstract
- Atomic composition of monolayers based on siloxane dimer of quaterthiophene deposited by Langmuir–Blodgett technique on a silicon dioxide surface partially covered by gold film and the stability of these monolayers upon surface treatment by Ar+ ions bombardment have been studied. Experimental results for the chemical composition of a series of studied surfaces have been obtained by X-ray photoelectron spectroscopy (XPS) by recording XPS spectra of C 1s, O 1s, S 2p, and Au 4f core levels. The relative concentration of Au and Si substrate atoms and the composition of ex situ prepared surface under study were determined within 10–15%, which indicates that Langmuir–Blodgett monolayers based on siloxane dimer of quaterthiophene form continuous coating in a considerable extent. Prior to the treatment of the studied surface by Ar+ ions bombardment, carbon- and oxygen-containing surface adsorbates provided a considerable contribution to the results of XPS measurements. The surface cleaning by Ar+ ions with energy 3 keV at electric current through sample of ~1 μA in several 30-s steps has led to the etching of surface adsorbates and next Langmuir–Blodgett films of the siloxane dimer of quaterthiophene.
- Subjects :
- Materials science
Silicon dioxide
Dimer
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Langmuir–Blodgett film
0104 chemical sciences
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
chemistry
X-ray photoelectron spectroscopy
Etching (microfabrication)
Siloxane
Monolayer
Physical chemistry
Crystallite
0210 nano-technology
Subjects
Details
- ISSN :
- 10906460 and 10637834
- Volume :
- 59
- Database :
- OpenAIRE
- Journal :
- Physics of the Solid State
- Accession number :
- edsair.doi...........609b56be22d0b3c153a0624bcc1c8122