A Physics Based Threshold Voltage Modeling of Trigate Junctionless FinFETs Considering Gaussian Doping

In this paper, the analytical modeling of Trigate Junctionless FinFETs has been explored. The analytical model expresses the potential distribution, minimum center potential and threshold voltage. The variable separation method has been used to develop the potential distribution and threshold voltage. Further, the analytical model analyzed for different device parameters of Fin width, Fin height, Gate oxide thickness and gate work function. The analytical model results are compared with Synopsys TCAD results which proves the validation of proposed analytical model.