Resistive random access memory based on gallium oxide thin films for self-powered pressure sensor systems

The resistive switching (RS) behavior of a gallium oxide (Ga2O3) thin film for use in resistive random access memory (RRAM) was investigated. Ta/Ga2O3/Pt memory devices exhibited favorable RS behavior, such as a small distribution of switching parameters and switching cycles of more than 3 × 106. X-ray photoelectron spectroscopy and the current transport mechanism indicated that that the RS behavior was attributed to the local variation on the Schottky barrier near the Pt electrode interface due to oxygen vacancies. A hybrid system for self-powered data storage and deletion was built by combining the RRAM device with a commercial Pb(Zr1-xTix)O3 piezoelectric ceramic as a pressure sensor/power generator. The excellent anti-interference and reuse performance of the system indicated promising potential for the application of this memory device.