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Microwave rapid heating used for diffusing impurities in silicon

Authors :
Suzuki Ayuta
Shunsuke Kimura
Mitsuru Ushijima
Toshiyuki Sameshima
Kosuke Ota
Masahiko Hasumi
Source :
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Publication Year :
2016
Publisher :
IEEE, 2016.

Abstract

We report diffusing boron and phosphorus dopant atoms in silicon with impurity sources of BOx and POx layers formed on the top surfaces of n- and p-type crystalline silicon substrates. The silicon samples with impurity sources were subsequently covered with carbon powders to effectively absorb 2.45 GHz microwave power. Microwave irradiation at 1000 W for 27 s rapidly heated the carbon powders to 1265°C. The sheet resistivity of the samples decreased to 29 and 16 Ω/sq because of boron and phosphorus doping by 29-s-microwave heating. The photo-induced minority carrier lifetime increased to 2.0×10−5 and 3.5×10−5 s by 20- and 14-s-microwave heating for the boron- and phosphorus-doped samples. Boron atoms with a concentration above 1020 cm−3 diffused 150 nm deep by 26-s-microwave heating. Achievements of diode rectified characteristics and photovoltaic effect demonstrate pn junction formation at the top surface region by the present doping method.

Details

Database :
OpenAIRE
Journal :
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
Accession number :
edsair.doi...........5ff94c74f72c95718e7e836aaf5d3c9e