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Etch Characteristics of SiO2 Using Pulsed Triple-Frequency for Ar/C4F6/O2 Capacitive Coupled Plasmas

Authors :
T H Kim
M H Jeon
Geun Young Yeom
J W Park
K N Kim
D H Yun
Source :
Journal of Nanoscience and Nanotechnology. 16:11831-11838
Publication Year :
2016
Publisher :
American Scientific Publishers, 2016.

Subjects

Subjects :
010302 applied physics
Materials science
business.industry
Capacitive sensing
Biomedical Engineering
Bioengineering
General Chemistry
Plasma
Condensed Matter Physics
01 natural sciences
0103 physical sciences
Optoelectronics
General Materials Science
business
Triple frequency

Details

ISSN :
15334880
Volume :
16
Database :
OpenAIRE
Journal :
Journal of Nanoscience and Nanotechnology
Accession number :
edsair.doi...........5f92d1b755e2f7672d8a73110b9efd30

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