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Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes
- Source :
- Solid State Communications. 150:734-738
- Publication Year :
- 2010
- Publisher :
- Elsevier BV, 2010.
-
Abstract
- Field-effect transistor characteristics of few-layer graphenes prepared by several methods have been investigated in comparison with those of single-layer graphene prepared by the in situ reduction of single-layer graphene oxide. Ambipolar features have been observed with single-layer graphene and n-type behaviour with all the few-layer graphenes, the best characteristics being found with the graphene possessing 2-3 layers prepared by arc-discharge of graphite in hydrogen. FETs based on boron and nitrogen doped graphene show n-type and p-type behaviour respectively. (C) 2010 Elsevier Ltd. All rights reserved.
Details
- ISSN :
- 00381098
- Volume :
- 150
- Database :
- OpenAIRE
- Journal :
- Solid State Communications
- Accession number :
- edsair.doi...........5f6a2a1ba74a1a956e74b06a8fda89f7