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Magnetic effects of direct ion implantation of Mn and Fe into p-GaN
- Source :
- Journal of Electronic Materials. 31:411-415
- Publication Year :
- 2002
- Publisher :
- Springer Science and Business Media LLC, 2002.
-
Abstract
- In p-GaN implanted with Mn (3 × 1016cm-2 at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely GaxMn1-xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.
- Subjects :
- Materials science
Ferromagnetic material properties
Condensed matter physics
Annealing (metallurgy)
Doping
Analytical chemistry
Condensed Matter Physics
Microstructure
Electronic, Optical and Magnetic Materials
Magnetization
Ion implantation
Ferromagnetism
Transmission electron microscopy
Materials Chemistry
Electrical and Electronic Engineering
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 31
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........5f55ef96a6dc6b81da3147cca65d5c3d