Lateral SOI diode design optimization for high ruggedness and low temperature dependence of reverse recovery characteristics

MLA

Yoshihiro Yamaguchi, et al. “Lateral SOI Diode Design Optimization for High Ruggedness and Low Temperature Dependence of Reverse Recovery Characteristics.” Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD’98 (IEEE Cat. No.98CH36212), Nov. 2002. EBSCOhost, https://doi.org/10.1109/ispsd.1998.702623.

APA

Yoshihiro Yamaguchi, Hideyuki Funaki, K. Hirayama, & Akio C O Patent Divis Nakagawa. (2002). Lateral SOI diode design optimization for high ruggedness and low temperature dependence of reverse recovery characteristics. Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD’98 (IEEE Cat. No.98CH36212). https://doi.org/10.1109/ispsd.1998.702623

Chicago

Yoshihiro Yamaguchi, Hideyuki Funaki, K. Hirayama, and Akio C O Patent Divis Nakagawa. 2002. “Lateral SOI Diode Design Optimization for High Ruggedness and Low Temperature Dependence of Reverse Recovery Characteristics.” Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD’98 (IEEE Cat. No.98CH36212), November. doi:10.1109/ispsd.1998.702623.