Effect of indium concentration on electrochemical properties of electrode-electrolyte interface of CuIn 1-x Ga x Se 2 prepared by electrodeposition

In this study, the electrochemical impedance spectroscopy (EIS) technique was used to investigate the electrochemical behavior of the interface between the Mo electrode and the Cu-In-Ga-Se electrolyte. In this electrodeposition system, the main parameters include (1) various deposition times, and (2) the effect of In 3+ concentration on the diffusion processes, electrical double layer, charge transfer resistance, and Warburg impedance. Experimental results revealed that the electrochemical kinetic behavior of CIGS thin film is strongly influenced by (1) the electrical double layer existing between the substrate, and (2) the electrolyte with different concentrations of In 3+ . With an increase in the electrodeposition time, the kinetic behavior of this electrodeposition system was gradually dominated by the diffusion process rather than charge transfer process.