Admittance spectroscopy measurements of band offsets in Si/Si1−xGex/Si heterostructures

Authors :: Theodore I. Kamins
C.A. King
J. E. Turner
J. F. Gibbons
K. Nauka
J. L. Hoyt
Source :: Applied Physics Letters. 60:195-197
Publication Year :: 1992
Publisher :: AIP Publishing, 1992.
Abstract: Admittance spectroscopy has been used to measure conduction‐ and valence‐band discontinuities in Si/Si1−xGex heterojunctions (0

Subjects :: Admittance spectroscopy
Physics and Astronomy (miscellaneous)
Chemistry
business.industry
Valence band
Mineralogy
Optoelectronics
Heterojunction
Classification of discontinuities
Thermal conduction
business
Electronic properties

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