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Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

Authors :
Minghwei Hong
Chia-Seng Chang
Mong-Hsun Tsai
Ya Ping Chiu
Min Chuan Shih
M. L. Huang
Bo Chao Huang
J. Y. Shen
J. Kwo
Po-Yao Chang
Source :
Applied Physics Letters. 99:212101
Publication Year :
2011
Publisher :
AIP Publishing, 2011.

Abstract

Direct measurements of band profile and band offsets across the Gd2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-κ/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd2O3 gate dielectric.

Details

ISSN :
10773118 and 00036951
Volume :
99
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........5e3da00bade674600eecb86f3e55aba0
Full Text :
https://doi.org/10.1063/1.3663628