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Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy
- Source :
- Applied Physics Letters. 99:212101
- Publication Year :
- 2011
- Publisher :
- AIP Publishing, 2011.
-
Abstract
- Direct measurements of band profile and band offsets across the Gd2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-κ/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd2O3 gate dielectric.
- Subjects :
- Local density of states
Physics and Astronomy (miscellaneous)
Condensed matter physics
Band gap
business.industry
Chemistry
Scanning tunneling spectroscopy
Gate dielectric
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Semimetal
law.invention
Condensed Matter::Materials Science
law
Optoelectronics
Direct and indirect band gaps
Scanning tunneling microscope
Spectroscopy
business
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 99
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........5e3da00bade674600eecb86f3e55aba0
- Full Text :
- https://doi.org/10.1063/1.3663628