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Improving Luminous Efficacy of The GaN-based Light-emitting Diodes by Using Different Shapes of Current Blocking Layer
- Source :
- Chinese Journal of Luminescence. 34:480-484
- Publication Year :
- 2013
- Publisher :
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 2013.
Details
- ISSN :
- 10007032
- Volume :
- 34
- Database :
- OpenAIRE
- Journal :
- Chinese Journal of Luminescence
- Accession number :
- edsair.doi...........5e26d376c030e5df7794e9ef1bb4f1a7