Ge nanocrystals embedded in a GeOx matrix formed by thermally annealing of Ge oxide films

The authors investigate the formation of Ge nanocrystals by thermal annealing of substoichiometric GeOx films fabricated by electron-beam evaporation. At the same time, they also monitor the evolution of the GeOx matrix. The phase separation into semiconductor and oxide phases and the evolution of Ge nanocrystals were monitored by a combination of x-ray diffraction (XRD), Raman, and transmission electron microscopy (TEM) measurements. TEM shows spherical particles of sizes in the range of 2–9nm. They infer that an annealing temperature of 500°C is sufficient to generate a reasonable density of Ge nanocrystals in an amorphous GeOx matrix. Both XRD and Raman measurements suggest a simultaneous crystallization of the matrix at an annealing temperature of 600°C.