Back to Search Start Over

Data for functional TiO2 embedded Silicon photodetectors under varying illumination and bias conditions

Authors :
Khushbu R. Chauhan
Dipal B. Patel
Source :
Data in Brief. 28:104856
Publication Year :
2020
Publisher :
Elsevier BV, 2020.

Abstract

In this data in brief (DIB) article, major photodetector (PD) characteristics of anisotype (Ag/n-TiO2/p-Si/Al), isotype (Ag/n-TiO2/n-Si/Ag) and M-S-M type (Ag/p-Si/Al) structures under reverse bias conditions (−1 to −5 V) over a broad spectral region (300–800 nm) have been presented. Critical figures of merit like current-voltage (IV), responsivity (R), detectivity (D), gain, sensitivity (S), linear dynamic range (LDR), normalized photo to dark current ratio (NPDR) and noise equivalent power (NEP) of TiO2 embedded Si PDs are presented in graphical forms. I–V characteristics of PDs under dark and monochromatic illuminations (365, 425, 515 and 600 nm) were acquired by using source measure unit (Kithley). Internal gain was deduced from photoresponse spectra which were recorded with the help of Potentiostat/Galvanostat (PGSTAT302N, Autolab) under monochromatic illumination at 100 Hz chopping frequency. Quantum efficiency instrument supplied by Optosolar was utilized to accurately measure the spectral responsivity and detectivity of PDs in wide spectral region (300–1100 nm). Please refer our main article [1] to understand the role of functional nanocrystalline TiO2 films on the performance of the photodetectors.

Details

ISSN :
23523409
Volume :
28
Database :
OpenAIRE
Journal :
Data in Brief
Accession number :
edsair.doi...........5df5dfd0df7a3bdcf9f97d2cbf3ecd6d
Full Text :
https://doi.org/10.1016/j.dib.2019.104856