UV-enhanced photorefractive sensitivity in Mn,Ce:LiNbO3

We report enhanced photorefractive sensitivity in Mn, Ce doped LiNbO3 at 514 nm and 633 nm under ultraviolet illumination at 365 nm. Without ultraviolet sensitization, the crystal showed very weak diffraction efficiency and self-erased behavior. The accumulation of charged states by ultraviolet light is observed even after the hologram is erased because of the asymmetric process of recording and reading. The concentrations of doped ions and the intensity ratio of ultraviolet and recording light are important factors to improve sensitivity in this material.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.