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InGaAs Schottky barrier diode array detectors integrated with broadband antenna (Conference Presentation)

Authors :
Il-Min Lee
Dong Woo Park
Jeong-Woo Park
Eui Su Lee
Hyun Soo Kim
Kyung Hyun Park
Source :
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications X.
Publication Year :
2017
Publisher :
SPIE, 2017.

Abstract

Terahertz (THz) waves have been actively studied for the applications of astronomy, communications, analytical science and bio-technologies due to their low energy and high frequency. For example, THz systems can carry more information with faster rates than GHz systems. Besides, THz waves can be applied to imaging, sensing, and spectroscopy. Furthermore, THz waves can be used for non-destructive and non-harmful tomography of living objects. In this reasons, Schottky barrier diodes (SBD) have been widely used as a THz detector for their ultrafast carrier transport, high responsivity, high sensitivity, and excellent noise equivalent power. Furthermore, SBD detectors envisage developing THz applications at low cost, excellent capability, and high yield. Since the major concerns in the THz detectors for THz imaging systems are the realizations of the real-time image acquisitions via a reduced acquisition time, rather than the conventional raster scans that obtains an image by pixel-by-pixel acquisitions, a line-scan based systems utilizes an array detector with an 1 × n SBD array is preferable. In this study, we fabricated the InGaAs based SBD array detectors with broadband antennas of log-spiral and square-spiral patterns. To optimize leakage current and ideality factor, the dependence to the doping levels of ohmic and Schottky layers have been investigated. In addition, the dependence to the capacitance and resistance to anode size are also examined as well. As a consequence, the real-time THz imaging with our InGaAs SBD array detector have been successfully obtained.

Details

Database :
OpenAIRE
Journal :
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications X
Accession number :
edsair.doi...........5db284e3e2ddf89dbbd150000a800e8c
Full Text :
https://doi.org/10.1117/12.2251621