Cite
Dopant Control and Diffusion at the Si/Si1-xGex Interface for High-Speed Heterojunction Bipolar Transistors
MLA
Theodore I. Kamins, et al. Dopant Control and Diffusion at the Si/Si1-XGex Interface for High-Speed Heterojunction Bipolar Transistors. Jan. 1994. EBSCOhost, https://doi.org/10.1016/b978-0-444-81889-8.50067-5.
APA
Theodore I. Kamins, D. Lefforge, J. L. Hoyt, K. Nauka, P. Kuo, J. E. Turner, & J. F. Gibbons. (1994). Dopant Control and Diffusion at the Si/Si1-xGex Interface for High-Speed Heterojunction Bipolar Transistors. https://doi.org/10.1016/b978-0-444-81889-8.50067-5
Chicago
Theodore I. Kamins, D. Lefforge, J. L. Hoyt, K. Nauka, P. Kuo, J. E. Turner, and J. F. Gibbons. 1994. “Dopant Control and Diffusion at the Si/Si1-XGex Interface for High-Speed Heterojunction Bipolar Transistors,” January. doi:10.1016/b978-0-444-81889-8.50067-5.