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Indium tin oxide etch characteristics using CxH2x+2(x=1,2,3)/Ar

Authors :
Jong Woo Hong
Hyun Min Cho
Yu Gwang Jeong
Da Woon Jung
Yun Jong Yeo
Ji Eun Kang
Hee Ju Kim
Hyun Woo Tak
Geun Young Yeom
Dong Woo Kim
Source :
Materials Science in Semiconductor Processing. 160:107395
Publication Year :
2023
Publisher :
Elsevier BV, 2023.

Details

ISSN :
13698001
Volume :
160
Database :
OpenAIRE
Journal :
Materials Science in Semiconductor Processing
Accession number :
edsair.doi...........5d0c2df41cf2a093f1c6dc6421cabb41
Full Text :
https://doi.org/10.1016/j.mssp.2023.107395