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Indium tin oxide etch characteristics using CxH2x+2(x=1,2,3)/Ar
- Source :
- Materials Science in Semiconductor Processing. 160:107395
- Publication Year :
- 2023
- Publisher :
- Elsevier BV, 2023.
Details
- ISSN :
- 13698001
- Volume :
- 160
- Database :
- OpenAIRE
- Journal :
- Materials Science in Semiconductor Processing
- Accession number :
- edsair.doi...........5d0c2df41cf2a093f1c6dc6421cabb41
- Full Text :
- https://doi.org/10.1016/j.mssp.2023.107395