Improving HiPIMS deposition rates by hybrid RF/HiPIMS co-sputtering, and its relevance for NbSi films

High Power Impulse Magnetron Sputtering (HiPIMS) with pre-ionization was successfully used for metal deposition at very low-pressures by feeding one cathode of a conventional dual magnetron deposition system, the other one being radio frequency (RF) supplied. By adjusting the pulse length and RF power, this hybrid RF/HiPIMS co-deposition process improved the deposition rate of niobium in a-NbSi films as well as the film homogeneity on 4 in. Si substrates. Moreover, the films obtained by hybrid RF/HiPIMS showed good response for both superconducting critical temperature transition (T c ) and normal resistivity (R), which compared favorably to films obtained by Electron Beam Physical Vapor Deposition (EB PVD) and standard DC/RF MS-PVD co-sputtering deposition currently used in the micro-fabrication of cryogenic detector.