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Ammonium Hydroxide Effect on Low-Temperature Wafer Bonding Energy Enhancement
- Source :
- Electrochemical and Solid-State Letters. 8:G74
- Publication Year :
- 2005
- Publisher :
- The Electrochemical Society, 2005.
-
Abstract
- A wafer prebonding treatment by ammonium hydroxide (NH 4 OH) leading to a high bonding strength at low temperatures is presented in three material systems. After 200°C annealing, a surface energy of about 700 mJ/m 2 for thermal silicon-oxide bonding and of 1300 mJ/m 2 for plasma-enhanced chemical vapor deposition oxide bonding is realized. It is suggested that the lower ability of ammonia, the by-product of a polymerization reaction, to break the siloxane (Si-O-Si) bridging bonds appears to be responsible for the increase in surface energy in both silicon oxide bonding cases. NH 4 OH treatment is also effective on bare germanium/ silicon-oxide bonding with a surface energy of 800 mJ/m 2 . A highly hydrophilic germanium surface obtained by this treatment accounts for the high bonding energy.
- Subjects :
- Materials science
Wafer bonding
General Chemical Engineering
Inorganic chemistry
Oxide
Bonding in solids
Chemical vapor deposition
Thermocompression bonding
Surface energy
Ammonium hydroxide
chemistry.chemical_compound
chemistry
Anodic bonding
Electrochemistry
General Materials Science
Electrical and Electronic Engineering
Physical and Theoretical Chemistry
Subjects
Details
- ISSN :
- 10990062
- Volume :
- 8
- Database :
- OpenAIRE
- Journal :
- Electrochemical and Solid-State Letters
- Accession number :
- edsair.doi...........5c7879ec8f0a43e0bae6218a0c827e42