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High Quality Epitaxial Growth on in-Situ Patterned Inp Substrates
- Source :
- MRS Proceedings. 145
- Publication Year :
- 1989
- Publisher :
- Springer Science and Business Media LLC, 1989.
-
Abstract
- We demonstrate a vacuum lithography process which uses a finely focused Ga ion beam to write the pattern which is then transferred to the InP pattern by low energy dry etching. Surface steps on the order of 1000-2000A in height, and lateral resolution limited only by size of the ion beam, can be efficiently prepared using moderate Ga ion fluences. The surfaces prepared by this process are damage free and suitable for epitaxial overgrowth. GaInAs/InP heterostructures grown on in-situ patterned substrates show excellent morphology and high luminescence efficiency.
Details
- ISSN :
- 19464274 and 02729172
- Volume :
- 145
- Database :
- OpenAIRE
- Journal :
- MRS Proceedings
- Accession number :
- edsair.doi...........5bab2c86af5a0f203bf626f5839e44f7