Back to Search
Start Over
Wide-wavelength range AlGaInAs laser array achieved by selective area growth on heterogenerous InP-on-Si wafer
- Source :
- Emerging Applications in Silicon Photonics II.
- Publication Year :
- 2021
- Publisher :
- SPIE, 2021.
-
Abstract
- In this work, we present an advanced heterogeneous integration scheme which consists in integrating a thin InP layer by wafer-bonding onto a silicon wafer (InPoSi) on which a regrowth step of III-V materials is implemented. Vertical p-i-n AlGaInAs lasers obtained from a single Selective Area Growth (SAG) step on InPoSi were fabricated. Thanks to SAG, the AlGaInAs-MQW structures successfully cover a PL range of 160 nm in the C+L band. Based on these structures, a 5- channel laser array was fabricated. The latter successfully covers a 155 nm-wide spectral band from 1515 nm to 1670 nm with a maximum output power of 20 mW under continuous-wave regime at 20°C. High thermal stability up to 70°C is demonstrated with a characteristic temperature of 69°C for the lasers emitting from 1515 nm to 1600 nm.
Details
- Database :
- OpenAIRE
- Journal :
- Emerging Applications in Silicon Photonics II
- Accession number :
- edsair.doi...........5b64ed512db45c93fe8b414ee7c47df4