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4.8 A 0.44e−rms read-noise 32fps 0.5Mpixel high-sensitivity RG-less-pixel CMOS image sensor using bootstrapping reset
- Source :
- ISSCC
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- In the past several years, CMOS image sensors (CISs) with sub-single-electron noise level, particularly, deep sub-electron read noise (less than 0.5e-rms), have been reported. Such an ultra-low noise level is realized with a reduced floating diffusion (FD) node capacitance for attaining the high pixel conversion gain (CG) [1,2], and a high-gain readout circuitry with noise-reduction capabilities [3,4]. Recently, a reset-gate-less (RGL) CMOS image sensor has been reported [5]. It shows an excellent read noise performance using an optimized pixel structure for high CG and high-gain column ADC with multiple sampling. In this technique, however, a very high pulsed voltage of approximately 25V for the FD reset is essential to cause a punch-through effect. It is not suitable for image sensors with high pixel resolution and high-speed signal readout.
- Subjects :
- 010302 applied physics
Physics
Pixel
Noise (signal processing)
020208 electrical & electronic engineering
Linearity
02 engineering and technology
01 natural sciences
Signal
CMOS
Logic gate
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Electronic engineering
Image sensor
Image resolution
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 IEEE International Solid-State Circuits Conference (ISSCC)
- Accession number :
- edsair.doi...........5b49434b885ee7b2a82c56a483c6079e