Preparation and properties of lead-based ferroelectric thin films

The crystalline properties of sol-gel derived lead-based ferroelectric thin films on several kinds of substrates were investigated. The polycrystalline lead zirconium titanate (PZT), lead lanthanum titanate (PLT) and PbTiO 3 ferroelectric thin films, the highly oriented PbTiO 3 ferroelectric thin films and the epitaxial growth PZT, PLT ferroelectric thin films with perovskite-type structure were prepared by the sol-gel method. Lead-based ferroelectric thin films had good ferroelectricity. The remanent polarization P r and coercive field E c of Pb(Zr 0.5 Ti 0.5 )O 3 ceramic thin films at 1 kHz were 20 μC cm -2 and 40 kV cm -1 respectively. P r and E c of the PLTIS ceramic thin films at 1 kHz were 17 μC cm -2 and 46 kV cm -1 respectively. P r and E c of the PbTiO 3 ceramic thin films at 50 Hz were 15 μC cm -2 and 80 kV cm -1 respectively. Lead-based ferroelectric thin films had good pyroelectricity. The pyroelectric coefficients y of the PLT5, PLT10, PLT15 and PbTiO 3 ceramic thin films at room temperature were 3.37 X 10 -8 C cm -2 K -1 , 5.25 X 10 -8 C cm -2 K -1 , 7.10 X 10 -8 C cm -2 K -1 and 2.9 X 10 -8 C cm -2 K -1 respectively. The dielectric constants e γ of PLT and PbTiO 3 ceramic thin films were about 200 and 150. The dielectric losses tan 8 of PLT and PbTiO 3 ceramic thin films were about 0.02 and 0.01 respectively.