Effect of reactive gas condition on nonpolar AlN film growth on MnS/Si (100) by reactive DC sputtering

The effects of reactive gas flow conditions on nonpolar AlN film growth on MnS/Si (100) substrates using reactive DC magnetron sputtering were investigated. During AlN deposition at a substrate temperature of 750 °C, the MnS surface can be unintentionally nitrided, resulting in a decrease in the crystallinity of the AlN. Low-temperature growth of the AlN layer at 300 °C prevents this nitridation and results in the crystallization of nonpolar AlN. A N2 flow equal to 30% of the Ar sputtering gas flow was found to improve the crystallinity of the nonpolar AlN and to reduce nitrogen defects, which play an important role in interfacial reactions. Nitrogen defects promote the formation of alloys such as AlMn and MnSi that degrade the interface and can significantly decompose the MnS. A higher proportion of N2 improves the nonpolar AlN crystallinity, reduces the concentration of defects and suppresses reactions at the AlN/MnS interface.