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Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaN/Si heterojunctions
- Source :
- Journal of Applied Physics. 110:093514
- Publication Year :
- 2011
- Publisher :
- AIP Publishing, 2011.
-
Abstract
- Growths of GaN on Si(111) ā (7 × 7) substrates by plasma-assisted molecular-beam epitaxy (PA-MBE) have been studied. Optimal conditions of MBE and the effect of a low-temperature (LT) buffer are followed. It is found that irrespective of the growth conditions and the growth strategies (direct versus two-step growth), a thin amorphous-like interface layer always forms. For smooth surfaces and better crystallinity of the epifilms, a LT-buffer preceding the high-temperature deposition is helpful, and the grown GaN films are of nitrogen-polar. Transport measurements of the heterojunctions of GaN on heavily p- and n-doped Si reveal ohmic behavior, whereas that of n-GaN on lightly doped nā-Si substrate shows rectifying characteristics.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 110
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........5ae14dd5c0cb9771d7354ebb5cf57d47