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IR luminescence in thermally treated silicon

Authors :
V. V. Bolotov
V. E. Kang
Source :
Semiconductors. 43:26-28
Publication Year :
2009
Publisher :
Pleiades Publishing Ltd, 2009.

Abstract

Near-edge IR luminescence with peak emission at E = 1.084 eV has been studied in n- and p-type silicon samples with different contents of interstitial oxygen under excitation with a Nd: YAG laser diode. Thermal treatments of the samples demonstrated that the luminescence nearly completely disappears upon thermal treatments at T = 1050°C and is partly restored in two stages in subsequent thermal treatments in the temperature range 550–800°C. The temperature intervals of luminescence quenching and restoration (500–600 and 700–800°C) correlate with the temperature ranges of dissolution for shallow oxygen precipitates (1000°C) and the generation of oxygen-containing thermal defects, the so-called thermal donors of types I and II. The data obtained suggest that the electronic states related to thermal donors are traps for nonequilibrium carriers and the emptying of these traps contributes to the near-edge emission.

Details

ISSN :
10906479 and 10637826
Volume :
43
Database :
OpenAIRE
Journal :
Semiconductors
Accession number :
edsair.doi...........5ad71bfd51bd0e08e72945c30966d62a