Cite

On Device Architectures, Subthreshold Swing, and Power Consumption of the Piezoelectric Field-Effect Transistor ( <tex-math notation='LaTeX'>${\pi }$ </tex-math>-FET)

MLA

Jurriaan Schmitz, et al. “On Device Architectures, Subthreshold Swing, and Power Consumption of the Piezoelectric Field-Effect Transistor ( ${\pi }$ -FET).” IEEE Journal of the Electron Devices Society, vol. 3, May 2015, pp. 149–57. EBSCOhost, https://doi.org/10.1109/jeds.2015.2409303.



APA

Jurriaan Schmitz, Raymond J. E. Hueting, Tom Van Hemert, R.A.M. Wolters, & B. Kaleli. (2015). On Device Architectures, Subthreshold Swing, and Power Consumption of the Piezoelectric Field-Effect Transistor ( ${\pi }$ -FET). IEEE Journal of the Electron Devices Society, 3, 149–157. https://doi.org/10.1109/jeds.2015.2409303



Chicago

Jurriaan Schmitz, Raymond J. E. Hueting, Tom Van Hemert, R.A.M. Wolters, and B. Kaleli. 2015. “On Device Architectures, Subthreshold Swing, and Power Consumption of the Piezoelectric Field-Effect Transistor ( ${\pi }$ -FET).” IEEE Journal of the Electron Devices Society 3 (May): 149–57. doi:10.1109/jeds.2015.2409303.