65.4: Active Matrix PHOLED Displays on Temporary Bonded Polyethylene Naphthalate Substrates with 180 °C a-Si:H TFTs

A low temperature, 180 °C, amorphous Si (a-Si:H) process on bonded polyethylene naphthalate substrates is discussed and a 4.1-inch QVGA active matrix (AM) phosphorescent OLED display is demonstrated. The n-channel thin-film transistors (TFTs) exhibited saturation mobilities of 0.773 cm2/V-sec, layer to layer registration distortion less than 10ppm and low defectivity. The efficiency of the OLED display is 39 cd/A at 500 nits.