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Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary Hf x Al1 − x O y oxide films

Authors :
A. A. Chuprik
Andrey S. Baturin
Yu.Yu. Lebedinskii
K. Bulakh
Artur A. Kuzin
K. V. Egorov
S. A. Zaitsev
D. V. Negrov
A. V. Zablotskii
Andrey M. Markeev
E. S. Gornev
Oleg M. Orlov
Source :
Russian Microelectronics. 43:239-245
Publication Year :
2014
Publisher :
Pleiades Publishing Ltd, 2014.

Abstract

A nonvolatile memory cell prototype based on the effect of resistive switching in thin Hf x Al1 − x O y oxide films grown by atomic layer deposition (ALD) with a Al depth-graded profile has been developed. This prototype imitates the arrangement of memory cells between the metallization layers of integral circuits. The obtained results are much superior to the parameters of conventional flash memory cells in increasing the reset speed and decreasing the reset voltage.

Details

ISSN :
16083415 and 10637397
Volume :
43
Database :
OpenAIRE
Journal :
Russian Microelectronics
Accession number :
edsair.doi...........5ab3e1b0a038d6837aa18fcec72ff652