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Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary Hf x Al1 − x O y oxide films
- Source :
- Russian Microelectronics. 43:239-245
- Publication Year :
- 2014
- Publisher :
- Pleiades Publishing Ltd, 2014.
-
Abstract
- A nonvolatile memory cell prototype based on the effect of resistive switching in thin Hf x Al1 − x O y oxide films grown by atomic layer deposition (ALD) with a Al depth-graded profile has been developed. This prototype imitates the arrangement of memory cells between the metallization layers of integral circuits. The obtained results are much superior to the parameters of conventional flash memory cells in increasing the reset speed and decreasing the reset voltage.
- Subjects :
- Materials science
business.industry
Oxide
Condensed Matter Physics
Flash memory
Electronic, Optical and Magnetic Materials
Non-volatile memory
Phase-change memory
Atomic layer deposition
chemistry.chemical_compound
chemistry
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Ternary operation
Reset (computing)
Voltage
Subjects
Details
- ISSN :
- 16083415 and 10637397
- Volume :
- 43
- Database :
- OpenAIRE
- Journal :
- Russian Microelectronics
- Accession number :
- edsair.doi...........5ab3e1b0a038d6837aa18fcec72ff652