Thermal atomic layer deposition of In2O3 thin films using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H2O

Indium oxide (In 2 O 3 ) thin films were deposited by atomic layer deposition using dimethyl( N -ethoxy-2,2-dimethylcarboxylicpropanamide)indium (Me 2 In(EDPA)) and H 2 O as the In-precursor and reactant, respectively. The In 2 O 3 films exhibited a saturated growth rate of 0.083 nm/cycle at a deposition temperature of 300 °C. Porous and amorphous films were grown at 150 °C, whereas dense polycrystalline films were deposited at higher deposition temperatures of 200–300 °C. XPS analysis revealed negligible carbon and nitrogen impurities incorporation within the films. The estimated bandgap of the In 2 O 3 films by spectroscopic ellipsometry and UV–vis spectroscopy was about 3.7 eV and the increase in refractive index with deposition temperature from 150 to 300 °C indicated that dense films were grown at higher temperatures. The high transmittance (>94% in visible light) and good electrical properties (resistivity ∼1.2–7 mΩ cm, Hall mobility ∼28–66 cm 2 /V s) of the In 2 O 3 films make them a viable option for optoelectronic applications.